2SA2016 transistors equivalent, pnp/npn epitaxial planar silicon transistors.
* Adoption of FBET and MBIT processes.
* High current capacitance.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* Ultrasmall.
Applications
* Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm 2163
[2SA2016/2SC556.
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